Ahmet Avsar
EPFL
Defects are ubiquitous in solids and often introduce new properties that are absent in pristine materials especially at their low-dimensional limits [1]. For example, atomic-scale disorder in two-dimensional (2D) transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range magnetic ordering in these otherwise non-magnetic materials. In this talk, I will present magneto-transport properties of ultrathin PtSe2 crystals down to monolayer thickness and demonstrate the emergence of such extrinsic magnetism [2]. Electrical measurements supported by first-principles calculations and aberration-corrected transmission electron microscopy imaging of point defects show the existence of either ferromagnetic or anti-ferromagnetic ground state orderings depending on the number of layers in this ultra-thin material. By combining this defect-induced magnetism with unique thickness-dependent electronic properties of PtSe2 emerging from the strong coupling between layers [3], I will discuss its potential integration into several 2D spintronics device applications [4].
[1] D. Rhodes et al., Nat. Mater. 18, 541-549 (2019).[2] A. Avsar et al., Nat. Nanotechnol., 14, 674-678 (2019).
[3] A. Ciarrocchi, A. Avsar, D. Ovchinnikov and A. Kis, Nat Commun., 9, 919 (2018).
[4] A. Avsar et al., Rev. Mod. Phys., 92 (2), 021003 (2020).




Emerging phenomena, such as the spin-Hall effect (SHE), spin pumping, and spin-transfer torque (STT), allow for interconversion between charge and spin currents and the generation of magnetization dynamics that could potentially lead to faster, denser, and more energy efficient, non-volatile memory and logic devices. Present STT-based devices rely on ferromagnetic (FM) materials as their active constituents. However, the flexibility offered by the intrinsic net magnetization and anisotropy for detecting and manipulating the magnetic state of ferromagnets also translates into limitations in terms of density (neighboring elements can couple through stray fields), speed (frequencies are limited to the GHz range), and frequency tunability (external magnetic fields needed). A new direction in the field of spintronics is to employ antiferromagnetic (AF) materials. In contrast to ferromagnets, where magnetic anisotropy dominates spin dynamics, in antiferromagnets spin dynamics are governed by the interatomic exchange interaction energies, which are orders of magnitude larger than the magnetic anisotropy energy, leading to the potential for ultrafast information processing and communication in the THz frequency range, with broadband frequency tunability without the need of external magnetic fields.
On-line Seminar: 10 June 2020 - 15:00 (CET)


