Rafael Lopes SEEGER
The paradigm shift consisting of using the spin-dependent transport properties of antiferromagnets in electronics led to many exciting challenges.1),2) This class of magnetic materials might offer a number of advantages in terms of new physics and device performance due to: i) robustness against external magnetic fields, ii) zero net magnetization which produces no stray field, and iii) high frequency dynamics, typically close to THz frequencies. Besides the interesting features mentioned above, antiferromagnets are found to show a wide variety of properties. In this talk, we will present a stimulating example of how antiferromagnets and superconductors may envision a common future by showing how to infer essential information about domain walls using Cooper pairs through antiferromagnets.3),4) Finally, we used magnetotransport experiments to demonstrate spin-dependent properties specific to the antiferromagnetic arrangement of spins, where we have observed a spontaneous Hall effect that relies in crystal and magnetic symmetries.5) We will focus on the experimental observation of a large spontaneous Hall effect in the Mn5Si3 antiferromagnet.
[1] T. Jungwirth et al, Nat. Nanotechnol. 11, 231 (2016)[2] V. Baltz et al, Rev. Mod. Phys. 90, 015005 (2018)
[3] A. I. Buzdin, Rev. Mod. Phys. 77, 935 (2005)
[4] R. L. Seeger et al, 104, 054413 (2021)
[5] H. Reichlova, R. L. Seeger et al, under review (2022)