Spin-orbit proximity phenomena in van der Waals materials


The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In particular, their atomically thin nature promotes the design of artificial quantum materials by proximity effects that originate from short-range interactions [1]. This designer approach is especially compelling for spintronic devices, which usually harness their functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them [2]. In this talk, I will highlight recent advances in this rapidly evolving field. I will further introduce novel ways to investigate proximity phenomena by means of spin transport dynamics, as reflected in spin relaxation anisotropy [3] and charge to spin interconversion [4] experiments. I will also discuss the relevance of crystal symmetry and the emergence of unconventional charge to spin conversion components when crystal symmetries are broken [5].

[1] J. F. Sierra et al., Nature Nano. 16, 856-868 (2021)
[2] H. Yang, S O. Valenzuela et al., Nature 606, 663-673 (2022)
[3] L. A. Benítez et al., Nature Phys. 14, 303-308 (2018); APL Materials 7, 120701 (2019)
[4] L. A. Benítez et al., Nature Mater. 19, 170-175 (2020)
[5] L. Camosi et al., 2D Mater. 9, 035014 (2022)