Anitferromagnetic memory with ultrafast writing speed

Time: Thursday, October 25th, 10:10
Speaker: Kamil OLEJNIK, Prague

The electrical control of magnetic moments of antiferromagnets (AFMs) using Néel-ordered current induced spin-orbit fields [1] opened possibility to use AFMs for practical memory applications [2]. Compared to ferromagnets (FMs) the AFMs theoretically promise up to three orders of magnitude faster magnetization dynamics.
Experimental results investigating the functionality of AFM memory cells fabricated from epitaxial CuMnAs films will be presented. First we investigate the electrical writing with pulse lengths ranging from milliseconds to hundreds of picoseconds [3]. Since shorter pulses cannot be applied using standard electrical circuitry, we use THz radiation pulses to investigate the writing in THz range. With the THz radiation pulses we observe analogous memory functionality demonstrating that the AFM memory cells can be written using picosecond electrical pulses [4].


[1] J. Železný et al. Phys. Rev. Lett. 113 (2014).
[2] P. Wadley et al., Science 351, 587–590 (2016).
[3] K. Olejník et al., Nat. Commun. 8, 15434 (2017).
[4] K. Olejník et al., Sci. Adv. 4, eaar3566 (2018).